Time variant layer control in atmospheric pressure chemical vapor deposition based growth of graphene
Type
Conference PaperKAUST Department
Electrical Engineering ProgramIntegrated Nanotechnology Lab
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Date
2013-04Permanent link to this record
http://hdl.handle.net/10754/564696
Metadata
Show full item recordAbstract
Graphene is a semi-metallic, transparent, atomic crystal structure material which is promising for its high mobility, strength and transparency - potentially applicable for radio frequency (RF) circuitry and energy harvesting and storage applications. Uniform (same number of layers), continuous (not torn or discontinuous), large area (100 mm to 200 mm wafer scale), low-cost, reliable growth are the first hand challenges for its commercialization prospect. We show a time variant uniform (layer control) growth of bi- to multi-layer graphene using atmospheric chemical vapor deposition system. We use Raman spectroscopy for physical characterization supported by electrical property analysis. © 2013 IEEE.Citation
Qaisi, R., Smith, C., & Hussain, M. M. (2013). Time variant layer control in atmospheric pressure chemical vapor deposition based growth of graphene. 2013 Saudi International Electronics, Communications and Photonics Conference. doi:10.1109/siecpc.2013.6550799Conference/Event name
2013 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013ISBN
9781467361958ae974a485f413a2113503eed53cd6c53
10.1109/SIECPC.2013.6550799