Type
Conference PaperKAUST Department
Electrical Engineering ProgramIntegrated Nanotechnology Lab
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Date
2013-04Permanent link to this record
http://hdl.handle.net/10754/564694
Metadata
Show full item recordAbstract
Nanoelectromechanical (NEM) switch is an interesting ultra-low power option which can operate in the harsh environment and can be a complementary element in complex digital circuitry. Although significant advancement is happening in this field, report on ultra-low voltage (pull-in) switch which offers high switching speed and area efficiency is yet to be made. One key challenge to achieve such characteristics is to fabricate nano-scale switches with amorphous metal so the shape and dimensional integrity are maintained to achieve the desired performance. Therefore, we report a tungsten alloy based amorphous metal with fabrication process development of laterally actuated dual gated NEM switches with 100 nm width and 200 nm air-gap to result in <5 volts of actuation voltage (Vpull-in). © 2013 IEEE.Citation
Mayet, A., Smith, C., & Hussain, M. M. (2013). Amorphous metal based nanoelectromechanical switch. 2013 Saudi International Electronics, Communications and Photonics Conference. doi:10.1109/siecpc.2013.6550765Conference/Event name
2013 Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013ISBN
9781467361958ae974a485f413a2113503eed53cd6c53
10.1109/SIECPC.2013.6550765