Memristor-based relaxation oscillators using digital gates

Type
Conference Paper

Authors
Khatib, Moustafa A.
Fouda, Mohamed E.
Mosad, Ahmed G.
Salama, Khaled N.
Radwan, Ahmed G.

KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Physical Science and Engineering (PSE) Division
Sensors Lab

Date
2012-11

Abstract
This paper presents two memristor-based relaxation oscillators. The proposed oscillators are designed without the need of any reactive elements, i.e., capacitor or inductor. As the 'resistance storage' property of the memristor can be exploited to generate the oscillation. The proposed oscillators have the advantage that they can be fully integrated on-chip giving an area-efficient solution. Furthermore, these oscillators give higher frequency other than the existing reactance-less oscillator and provide a wider range of the resistance. The concept of operation and the mathematical analysis for the proposed oscillators are explained and verified with circuit simulations showing an excellent agreement. © 2012 IEEE.

Citation
Khatib, M. A., Fouda, M. E., Mosad, A. G., Salama, K. N., & Radwan, A. G. (2012). Memristor-based relaxation oscillators using digital gates. 2012 Seventh International Conference on Computer Engineering & Systems (ICCES). doi:10.1109/icces.2012.6408491

Publisher
Institute of Electrical and Electronics Engineers (IEEE)

Journal
2012 Seventh International Conference on Computer Engineering & Systems (ICCES)

Conference/Event Name
2012 7th International Conference on Computer Engineering and Systems, ICCES 2012

DOI
10.1109/ICCES.2012.6408491

Permanent link to this record
http://hdl.handle.net/10754/564621
Collections
Conference Papers
Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division
Electrical and Computer Engineering Program
Physical Science and Engineering (PSE) Division
Sensors Lab