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dc.contributor.authorMcGlashon, Andrew J.
dc.contributor.authorZhang, Weimin
dc.contributor.authorSmilgies, Detlef Matthias
dc.contributor.authorShkunov, Maxim N.
dc.contributor.authorGenevičius, Kristijonas
dc.contributor.authorWhitehead, Katherine S.
dc.contributor.authorAmassian, Aram
dc.contributor.authorMalliaras, George G.
dc.contributor.authorBradley, Donal D C
dc.contributor.authorHeeney, Martin J.
dc.contributor.authorCampbell, Alasdair J.
dc.date.accessioned2015-08-04T07:04:47Z
dc.date.available2015-08-04T07:04:47Z
dc.date.issued2012-09
dc.identifier.issn15671739
dc.identifier.doi10.1016/j.cap.2011.07.042
dc.identifier.urihttp://hdl.handle.net/10754/564596
dc.description.abstract3′-methyl-(5,5′′-bis[3-ethyl-3-(6-phenyl-hexyloxymethyl) -oxetane])-2,2′:5′,2′′-terthiophene (5T(Me)Ox) is a solution processable small molecule semiconductor displaying smectic-C and nematic liquid crystal phases. The pendant oxetane group can be polymerized in situ in the presence of a suitable photoacid at concentrations ≥1% by weight. Spin-coated films of pure 5T(Me)Ox and 5T(Me)Ox doped with the soluble photoacid were characterized by absorption and photoluminescent spectroscopy. Thick pristine films showed absorption and emission from a crystalline phase. Thin monolayer (<5 nm) films, as well as thicker photoacid doped films, instead showed absorption from an H-aggregate phase and emission from an excimer. Optical microscopy showed a significant change in film structure upon addition of the photoacid; large and well-orientated crystals being replaced by much smaller domains which appear to vary in thickness. Grazing Incidence Wide Angle X-Ray Scattering (GIWAXS) was used to characterize the packing and orientation of molecules in the crystalline and doped samples. The results are consistent with the photoacid doped samples forming layers of H-aggregate phase monolayer sheets parallel to the substrate where the photoacid inhibits the transition into the three-dimensionally ordered crystalline phase. Field-effect transistors and light emitting diodes were constructed incorporating 5T(Me)Ox as the active layer. Pure 5T(Me)Ox field-effect transistors showed good, p-type device characteristics, but the morphological changes upon doping result in a loss of transistor action. In the diodes, curing through melting and exposure to UV light followed by photoacid removal resulted in an increase in current density but a decrease in light emission. These results indicate that the presence of the photoacid (≥1% by weight) can have a dramatic effect on the structure, morphology and device performance of ordered, photopatternable materials for organic electronics. © 2012 Elsevier Inc. All rights reserved.
dc.publisherElsevier BV
dc.subjectLiquid crystal
dc.subjectOrganic electronics
dc.subjectOrganic field effect transistor
dc.titleSpectroscopic and morphological investigation of conjugated photopolymerisable quinquethiophene liquid crystals
dc.typeConference Paper
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentOrganic Electronics and Photovoltaics Group
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalCurrent Applied Physics
dc.conference.nameInternational Workshop on Flexible & Printable Electronics
dc.contributor.institutionDepartment of Physics, Imperial College London, London SW7 2AZ, United Kingdom
dc.contributor.institutionDepartment of Chemistry, Imperial College London, London SW7 2AZ, United Kingdom
dc.contributor.institutionCornell High Energy Synchrotron Source (CHESS), Wilson Laboratory, Cornell University, Ithaca, NY 14853, United States
dc.contributor.institutionMerck Chemicals Ltd, Southampton SO16 7QD, United Kingdom
dc.contributor.institutionDepartment of Materials Science and Engineering, 327 Bard Hall, Cornell University, Ithaca, NY 14853, United States
kaust.personAmassian, Aram


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