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    Spectroscopic and morphological investigation of conjugated photopolymerisable quinquethiophene liquid crystals

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    Type
    Conference Paper
    Authors
    McGlashon, Andrew J.
    Zhang, Weimin
    Smilgies, Detlef Matthias
    Shkunov, Maxim N.
    Genevičius, Kristijonas
    Whitehead, Katherine S.
    Amassian, Aram cc
    Malliaras, George G. cc
    Bradley, Donal D C
    Heeney, Martin J.
    Campbell, Alasdair J.
    KAUST Department
    KAUST Solar Center (KSC)
    Material Science and Engineering Program
    Organic Electronics and Photovoltaics Group
    Physical Science and Engineering (PSE) Division
    Date
    2012-09
    Permanent link to this record
    http://hdl.handle.net/10754/564596
    
    Metadata
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    Abstract
    3′-methyl-(5,5′′-bis[3-ethyl-3-(6-phenyl-hexyloxymethyl) -oxetane])-2,2′:5′,2′′-terthiophene (5T(Me)Ox) is a solution processable small molecule semiconductor displaying smectic-C and nematic liquid crystal phases. The pendant oxetane group can be polymerized in situ in the presence of a suitable photoacid at concentrations ≥1% by weight. Spin-coated films of pure 5T(Me)Ox and 5T(Me)Ox doped with the soluble photoacid were characterized by absorption and photoluminescent spectroscopy. Thick pristine films showed absorption and emission from a crystalline phase. Thin monolayer (<5 nm) films, as well as thicker photoacid doped films, instead showed absorption from an H-aggregate phase and emission from an excimer. Optical microscopy showed a significant change in film structure upon addition of the photoacid; large and well-orientated crystals being replaced by much smaller domains which appear to vary in thickness. Grazing Incidence Wide Angle X-Ray Scattering (GIWAXS) was used to characterize the packing and orientation of molecules in the crystalline and doped samples. The results are consistent with the photoacid doped samples forming layers of H-aggregate phase monolayer sheets parallel to the substrate where the photoacid inhibits the transition into the three-dimensionally ordered crystalline phase. Field-effect transistors and light emitting diodes were constructed incorporating 5T(Me)Ox as the active layer. Pure 5T(Me)Ox field-effect transistors showed good, p-type device characteristics, but the morphological changes upon doping result in a loss of transistor action. In the diodes, curing through melting and exposure to UV light followed by photoacid removal resulted in an increase in current density but a decrease in light emission. These results indicate that the presence of the photoacid (≥1% by weight) can have a dramatic effect on the structure, morphology and device performance of ordered, photopatternable materials for organic electronics. © 2012 Elsevier Inc. All rights reserved.
    Publisher
    Elsevier BV
    Journal
    Current Applied Physics
    Conference/Event name
    International Workshop on Flexible & Printable Electronics
    DOI
    10.1016/j.cap.2011.07.042
    ae974a485f413a2113503eed53cd6c53
    10.1016/j.cap.2011.07.042
    Scopus Count
    Collections
    Conference Papers; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program; KAUST Solar Center (KSC)

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