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dc.contributor.authorRojas, Jhonathan Prieto*
dc.contributor.authorHussain, Muhammad Mustafa*
dc.date.accessioned2015-08-04T07:04:35Zen
dc.date.available2015-08-04T07:04:35Zen
dc.date.issued2012-08en
dc.identifier.isbn9781467321983en
dc.identifier.issn19449399en
dc.identifier.doi10.1109/NANO.2012.6322056en
dc.identifier.urihttp://hdl.handle.net/10754/564587en
dc.description.abstractWe present a conventional micro-fabrication based thin film vertical sidewall (spacer) width controlled nano-gap fabrication process to create arrays of nanopatterns for high density precisely positioned self-assembled nanoelectronics device integration. We have used conventional optical lithography to create base structures and then silicon nitride (Si 3N4) based spacer formation via reactive ion etching. Control of Si3N4 thickness provides accurate control of vertical sidewall (spacer) besides the base structures. Nano-gaps are fabricated between two adjacent spacers whereas the width of the gap depends on the gap between two adjacent base structures minus width of adjacent spacers. We demonstrate the process using a 32 nm node complementary metal oxide semiconductor (CMOS) platform to show its compatibility for very large scale heterogeneous integration of top-down and bottom-up fabrication as well as conventional and selfassembled nanodevices. This process opens up clear opportunity to overcome the decade long challenge of high density integration of self-assembled devices with precise position control. © 2012 IEEE.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.titleSub-15 nm nano-pattern generation by spacer width control for high density precisely positioned self-assembled device nanomanufacturingen
dc.typeConference Paperen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division*
dc.contributor.departmentElectrical Engineering Program*
dc.contributor.departmentIntegrated Nanotechnology Lab*
dc.identifier.journal2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO)en
dc.conference.date20 August 2012 through 23 August 2012en
dc.conference.name2012 12th IEEE International Conference on Nanotechnology, NANO 2012en
dc.conference.locationBirminghamen
dc.contributor.institutionIntegrated Nanotechnology Lab, Electrical Engineering Program, Saudi Arabia*
kaust.authorRojas, Jhonathan Prieto*
kaust.authorHussain, Muhammad Mustafa*


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