Sub-15 nm nano-pattern generation by spacer width control for high density precisely positioned self-assembled device nanomanufacturing
Type
Conference PaperKAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Integrated Nanotechnology Lab
Physical Science and Engineering (PSE) Division
Date
2012-08Permanent link to this record
http://hdl.handle.net/10754/564587
Metadata
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We present a conventional micro-fabrication based thin film vertical sidewall (spacer) width controlled nano-gap fabrication process to create arrays of nanopatterns for high density precisely positioned self-assembled nanoelectronics device integration. We have used conventional optical lithography to create base structures and then silicon nitride (Si 3N4) based spacer formation via reactive ion etching. Control of Si3N4 thickness provides accurate control of vertical sidewall (spacer) besides the base structures. Nano-gaps are fabricated between two adjacent spacers whereas the width of the gap depends on the gap between two adjacent base structures minus width of adjacent spacers. We demonstrate the process using a 32 nm node complementary metal oxide semiconductor (CMOS) platform to show its compatibility for very large scale heterogeneous integration of top-down and bottom-up fabrication as well as conventional and selfassembled nanodevices. This process opens up clear opportunity to overcome the decade long challenge of high density integration of self-assembled devices with precise position control. © 2012 IEEE.Citation
Rojas, J. P., & Hussain, M. M. (2012). Sub-15 nm nano-pattern generation by spacer width control for high density precisely positioned self-assembled device nanomanufacturing. 2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO). doi:10.1109/nano.2012.6322056Conference/Event name
2012 12th IEEE International Conference on Nanotechnology, NANO 2012ISBN
9781467321983ae974a485f413a2113503eed53cd6c53
10.1109/NANO.2012.6322056