Asymmetric voltage behavior of the tunnel magnetoresistance in double barrier magnetic tunnel junctions
Type
Conference PaperKAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Physical Science and Engineering (PSE) Division
Sensing, Magnetism and Microsystems Lab
Date
2012-06Permanent link to this record
http://hdl.handle.net/10754/564558
Metadata
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In this paper, we study the value of the tunnel magnetoresistance (TMR) as a function of the applied voltage in double barrier magnetic tunnel junctions (DMTJs) with the left and right ferromagnetic (FM) layers being pinned and numerically estimate the possible difference of the TMR curves for negative and positive voltages in the homojunctions (equal barriers and electrodes). DMTJs are modeled as two single barrier junctions connected in series with consecutive tunneling (CST). We investigated the asymmetric voltage behavior of the TMR for the CST in the range of a general theoretical model. Significant asymmetries of the experimental curves, which arise due to different annealing regimes, are mostly explained by different heights of the tunnel barriers and asymmetries of spin polarizations in magnetic layers. © (2012) Trans Tech Publications.Citation
Useinov, A., Gooneratne, C., & Kosel, J. (2012). Asymmetric Voltage Behavior of the Tunnel Magnetoresistance in Double Barrier Magnetic Tunnel Junctions. Solid State Phenomena, 190, 145–148. doi:10.4028/www.scientific.net/ssp.190.145Publisher
Trans Tech Publications, Ltd.Journal
Solid State PhenomenaConference/Event name
5th Moscow International Symposium on Magnetism, MISM 2011ISBN
9783037854365ae974a485f413a2113503eed53cd6c53
10.4028/www.scientific.net/SSP.190.145