Asymmetric voltage behavior of the tunnel magnetoresistance in double barrier magnetic tunnel junctions
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Physical Science and Engineering (PSE) Division
Sensing, Magnetism and Microsystems Lab
Permanent link to this recordhttp://hdl.handle.net/10754/564558
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AbstractIn this paper, we study the value of the tunnel magnetoresistance (TMR) as a function of the applied voltage in double barrier magnetic tunnel junctions (DMTJs) with the left and right ferromagnetic (FM) layers being pinned and numerically estimate the possible difference of the TMR curves for negative and positive voltages in the homojunctions (equal barriers and electrodes). DMTJs are modeled as two single barrier junctions connected in series with consecutive tunneling (CST). We investigated the asymmetric voltage behavior of the TMR for the CST in the range of a general theoretical model. Significant asymmetries of the experimental curves, which arise due to different annealing regimes, are mostly explained by different heights of the tunnel barriers and asymmetries of spin polarizations in magnetic layers. © (2012) Trans Tech Publications.
CitationUseinov, A., Gooneratne, C., & Kosel, J. (2012). Asymmetric Voltage Behavior of the Tunnel Magnetoresistance in Double Barrier Magnetic Tunnel Junctions. Solid State Phenomena, 190, 145–148. doi:10.4028/www.scientific.net/ssp.190.145
PublisherTrans Tech Publications, Ltd.
JournalSolid State Phenomena
Conference/Event name5th Moscow International Symposium on Magnetism, MISM 2011