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dc.contributor.authorTabet, Nouar A.
dc.contributor.authorAl-Sayoud, Abduljabar
dc.contributor.authorSaid, Seyed
dc.contributor.authorYang, Xiaoming
dc.contributor.authorYang, Yang
dc.contributor.authorSyed, Ahad A.
dc.contributor.authorDiallo, Elhadj
dc.contributor.authorWang, Zhihong
dc.contributor.authorWang, Xianbin
dc.contributor.authorJohlin, Eric
dc.contributor.authorSimmons, Christine
dc.contributor.authorBuonassisi, Tonio
dc.date.accessioned2015-08-04T07:03:54Z
dc.date.available2015-08-04T07:03:54Z
dc.date.issued2012-06
dc.identifier.citationTabet, N., Al-Sayoud, A., Said, S., Yang, X., Yang, Y., Syed, A., … Buonassisi, T. (2012). Raman study of localized recrystallization of amorphous silicon induced by laser beam. 2012 38th IEEE Photovoltaic Specialists Conference. doi:10.1109/pvsc.2012.6317637
dc.identifier.isbn9781467300643
dc.identifier.issn01608371
dc.identifier.doi10.1109/PVSC.2012.6317637
dc.identifier.urihttp://hdl.handle.net/10754/564556
dc.description.abstractThe adoption of amorphous silicon based solar cells has been drastically hindered by the low efficiency of these devices, which is mainly due to a low hole mobility. It has been shown that using both crystallized and amorphous silicon layers in solar cells leads to an enhancement of the device performance. In this study the crystallization of a-Si prepared by PECVD under various growth conditions has been investigated. The growth stresses in the films are determined by measuring the curvature change of the silicon substrate before and after film deposition. Localized crystallization is induced by exposing a-Si films to focused 532 nm laser beam of power ranging from 0.08 to 8 mW. The crystallization process is monitored by recording the Raman spectra after various exposures. The results suggest that growth stresses in the films affect the minimum laser power (threshold power). In addition, a detailed analysis of the width and position of the Raman signal indicates that the silicon grains in the crystallized regions are of few nm diameter. © 2012 IEEE.
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.subjectamorphous silicon
dc.subjectRaman
dc.subjectrecrystallization
dc.subjectstresses
dc.titleRaman study of localized recrystallization of amorphous silicon induced by laser beam
dc.typeConference Paper
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Lab
dc.contributor.departmentCore Labs
dc.identifier.journal2012 38th IEEE Photovoltaic Specialists Conference
dc.conference.date3 June 2012 through 8 June 2012
dc.conference.name38th IEEE Photovoltaic Specialists Conference, PVSC 2012
dc.conference.locationAustin, TX
dc.contributor.institutionKFUPM-MIT Center of Research for Clean Water and Clean Energy (CoR-CWCE), King Fahd University of Petroleum and Minerals, Dhahran 31261, Saudi Arabia
dc.contributor.institutionCenter of Research Excellence in Renewable Energy (CoRE-RE), King Fahd University of Petroleum and Minerals, Dhahran 31261, Saudi Arabia
dc.contributor.institutionMassachusetts Institute of Technology, Cambridge, MA 02139, United States
kaust.personYang, Xiaoming
kaust.personYang, Yang
kaust.personWang, Zhihong
kaust.personWang, Xianbin
kaust.personSyed, Ahad A.
kaust.personDiallo, Elhadj


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