Effect of carrier relaxation lifetime on the performance of InAs/InP quantum-dash lasers
KAUST DepartmentPhysical Sciences and Engineering (PSE) Division
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Permanent link to this recordhttp://hdl.handle.net/10754/564478
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AbstractThe effect of carrier relaxation process into the quantum dash (Qdash) ground state (GS) is examined theoretically by carrier-photon rate equation model incorporating the inhomogeneous broadening. Increase in the relaxation time and the inhomogeneous broadening degrades the threshold current density. Moreover, our results show that a relaxation time of less than 2 ps gives optimum laser performance. © 2011 IEEE.
Conference/Event name8th International Conference on High-Capacity Optical Networks and Emerging Technologies, HONET 2011