Power gating of VLSI circuits using MEMS switches in low power applications
Ghoneim, Mohamed T.
El Boghdady, Nawal
Iskander, Sophinese M.
Anis, Mohab H.
KAUST DepartmentElectrical Engineering Program
Permanent link to this recordhttp://hdl.handle.net/10754/564472
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AbstractPower dissipation poses a great challenge for VLSI designers. With the intense down-scaling of technology, the total power consumption of the chip is made up primarily of leakage power dissipation. This paper proposes combining a custom-designed MEMS switch to power gate VLSI circuits, such that leakage power is efficiently reduced while accounting for performance and reliability. The designed MEMS switch is characterized by an 0.1876 ? ON resistance and requires 4.5 V to switch. As a result of implementing this novel power gating technique, a standby leakage power reduction of 99% and energy savings of 33.3% are achieved. Finally the possible effects of surge currents and ground bounce noise are studied. These findings allow longer operation times for battery-operated systems characterized by long standby periods. © 2011 IEEE.
CitationShobak, H., Ghoneim, M., El Boghdady, N., Halawa, S., Iskander, S., & Anis, M. (2011). Power gating of VLSI circuits using MEMS switches in low power applications. ICM 2011 Proceeding. doi:10.1109/icm.2011.6177407
JournalICM 2011 Proceeding
Conference/Event name2011 23rd International Conference on Microelectronics, ICM 2011