Show simple item record

dc.contributor.authorElafandy, Rami T.*
dc.contributor.authorNg, Tien Khee*
dc.contributor.authorYang, Yang*
dc.contributor.authorCha, Dong Kyu*
dc.contributor.authorZhang, Bei*
dc.contributor.authorZhao, Lan*
dc.contributor.authorZhang, Meng*
dc.contributor.authorBhattacharya, Pallab K.*
dc.contributor.authorOoi, Boon S.*
dc.date.accessioned2015-08-04T07:01:36Zen
dc.date.available2015-08-04T07:01:36Zen
dc.date.issued2011-12en
dc.identifier.isbn9781457711695en
dc.identifier.doi10.1109/HONET.2011.6149817en
dc.identifier.urihttp://hdl.handle.net/10754/564461en
dc.description.abstractComparison between indium rich (27%) InGaN/GaN quantum dots (QDs) and their underlying wetting layer (WL) is performed by means of optical and structural characterizations. With increasing temperature, micro-photoluminescence (μPL) study reveals the superior ability of QDs to prevent carrier thermalization to nearby traps compared to the two dimensional WL. Thus, explaining the higher internal quantum efficiency of the QD nanostructure compared to the higher dimensional WL. Structural characterization (X-ray diffraction (XRD)) and transmission electron microscopy (TEM)) reveal an increase in the QD indium content over the WL indium content which is due to strain induced drifts. © 2011 IEEE.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.subjectInGaN polar quantum dotsen
dc.subjectinternal quantum efficiencyen
dc.subjectquantum confined stark effecten
dc.subjecttemperature dependent photoluminescenceen
dc.subjectwetting layeren
dc.titleOptical and micro-structural characterizations of MBE grown indium gallium nitride polar quantum dotsen
dc.typeConference Paperen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division*
dc.contributor.departmentImaging and Characterization Core Lab*
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division*
dc.contributor.departmentElectrical Engineering Program*
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Lab*
dc.contributor.departmentCore Labs*
dc.contributor.departmentPhotonics Laboratory*
dc.identifier.journal8th International Conference on High-capacity Optical Networks and Emerging Technologiesen
dc.conference.date19 December 2011 through 21 December 2011en
dc.conference.name8th International Conference on High-Capacity Optical Networks and Emerging Technologies, HONET 2011en
dc.conference.locationRiyadhen
dc.contributor.institutionDepartment of Electrical Engineering and Computer Science, University of Michigan, MI 48109-2122, United States*
kaust.authorNg, Tien Khee*
kaust.authorYang, Yang*
kaust.authorCha, Dong Kyu*
kaust.authorZhang, Bei*
kaust.authorOoi, Boon S.*
kaust.authorElafandy, Rami T.*
kaust.authorZhao, Lan*


This item appears in the following Collection(s)

Show simple item record