Optical and micro-structural characterizations of MBE grown indium gallium nitride polar quantum dots
AuthorsElafandy, Rami T.
Ng, Tien Khee
Cha, Dong Kyu
Bhattacharya, Pallab K.
Ooi, Boon S.
KAUST DepartmentAdvanced Nanofabrication, Imaging and Characterization Core Lab
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Imaging and Characterization Core Lab
Physical Science and Engineering (PSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/564461
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AbstractComparison between indium rich (27%) InGaN/GaN quantum dots (QDs) and their underlying wetting layer (WL) is performed by means of optical and structural characterizations. With increasing temperature, micro-photoluminescence (μPL) study reveals the superior ability of QDs to prevent carrier thermalization to nearby traps compared to the two dimensional WL. Thus, explaining the higher internal quantum efficiency of the QD nanostructure compared to the higher dimensional WL. Structural characterization (X-ray diffraction (XRD)) and transmission electron microscopy (TEM)) reveal an increase in the QD indium content over the WL indium content which is due to strain induced drifts. © 2011 IEEE.
Conference/Event name8th International Conference on High-Capacity Optical Networks and Emerging Technologies, HONET 2011