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dc.contributor.authorKim, Moon
dc.contributor.authorPark, Seongyong
dc.contributor.authorCha, Dong Kyu
dc.contributor.authorKim, Jiyoung
dc.contributor.authorFloresca, Herman Carlo
dc.contributor.authorLu, Ning
dc.contributor.authorWang, Jinguo
dc.date.accessioned2015-08-04T07:01:06Z
dc.date.available2015-08-04T07:01:06Z
dc.date.issued2011-10
dc.identifier.citationKim, M. J., Park, S. Y., Cha, D. K., Kim, J., Floresca, H. C., Ning Lu, & Wang, J. G. (2011). In-situ TEM characterization of nanomaterials and devices. 2011 IEEE Nanotechnology Materials and Devices Conference. doi:10.1109/nmdc.2011.6155318
dc.identifier.isbn9781457721397
dc.identifier.doi10.1109/NMDC.2011.6155318
dc.identifier.urihttp://hdl.handle.net/10754/564442
dc.description.abstractElectrical properties of nano size devices were directly measured by TEM. Real time observation of phase transition behavior in PRAM revealed that the volume of the crystalline phase is the main factor in determining cell resistance. In the transistor device, we have identified the doping type and area by measuring the I-V curve at the individual nano contact on the specimen. The evolution of the graphene edge structure was controlled and monitored at and up to 1200°C in-situ. © 2011 IEEE.
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.titleIn-situ TEM characterization of nanomaterials and devices
dc.typeConference Paper
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentCore Labs
dc.identifier.journal2011 IEEE Nanotechnology Materials and Devices Conference
dc.conference.date18 October 2011 through 21 October 2011
dc.conference.name2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011
dc.conference.locationJeju
dc.contributor.institutionUniversity of Texas at Dallas, Richardson, TX 75080, United States
dc.contributor.institutionSamsung Electronics Co., Hwasung-City, Geyongggi-Do, 445-701, South Korea
kaust.personCha, Dong Kyu


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