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AbstractElectrical properties of nano size devices were directly measured by TEM. Real time observation of phase transition behavior in PRAM revealed that the volume of the crystalline phase is the main factor in determining cell resistance. In the transistor device, we have identified the doping type and area by measuring the I-V curve at the individual nano contact on the specimen. The evolution of the graphene edge structure was controlled and monitored at and up to 1200°C in-situ. © 2011 IEEE.
CitationKim, M. J., Park, S. Y., Cha, D. K., Kim, J., Floresca, H. C., Ning Lu, & Wang, J. G. (2011). In-situ TEM characterization of nanomaterials and devices. 2011 IEEE Nanotechnology Materials and Devices Conference. doi:10.1109/nmdc.2011.6155318
Conference/Event name2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011