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    Spin asymmetry calculations of the TMR-V curves in single and double-barrier magnetic tunnel junctions

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    Type
    Article
    Authors
    Useinov, Arthur
    Kosel, Jürgen cc
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    Physical Science and Engineering (PSE) Division
    Sensing, Magnetism and Microsystems Lab
    Date
    2011-10
    Permanent link to this record
    http://hdl.handle.net/10754/564439
    
    Metadata
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    Abstract
    Spin-polarization asymmetry is the key parameter in asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) in magnetic tunnel junctions. In this paper, we study the value of the TMR as a function of the applied voltage Va in the single as well as double barrier magnetic tunnel junctions (SMTJ & DMTJ, which are constructed from CoFeB/MgO interfaces) and numerically estimate the possible difference of the TMR-V a curves for negative and positive voltages in the homojunctions. As a result, we found that AVB may help to determine the exact values of Fermi wave vectors for minority and majority conducting spin sub-bands. Moreover, significant asymmetry of the experimental TMR-Va curves, which arises due to different annealing regimes, is explained by different heights of the tunnel barriers and values of the spin asymmetry. The numerical TMR-V a data are in good agreement with experimental ones. © 2011 IEEE.
    Publisher
    Institute of Electrical and Electronics Engineers (IEEE)
    Journal
    IEEE Transactions on Magnetics
    DOI
    10.1109/TMAG.2011.2153182
    ae974a485f413a2113503eed53cd6c53
    10.1109/TMAG.2011.2153182
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Electrical Engineering Program; Sensing, Magnetism and Microsystems Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

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