Theoretical observation of two state lasing from InAs/InP quantum-dash lasers

Type
Conference Paper

Authors
Khan, Mohammed Zahed Mustafa
Ng, Tien Khee
Schwingenschlögl, Udo
Ooi, Boon S.

KAUST Department
Computational Physics and Materials Science (CPMS)
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Material Science and Engineering Program
Photonics Laboratory
Physical Science and Engineering (PSE) Division

Date
2011-09

Abstract
The effect of cavity length on the lasing wavelength of InAs/InP quantum dash (Qdash) laser is examined using the carrier-photon rate equation model including the carrier relaxation process from the Qdash ground state and excited state. Both, homogeneous and inhomogeneous broadening has been incorporated in the model. We show that ground state lasing occurs with longer cavity lasers and excited state lasing occurs from relatively short cavity lasers. © 2011 IEEE.

Citation
Khan, M. Z. M., Ng, T. K., Schwingenschlogl, U., & Ooi, B. S. (2011). Theoretical observation of two state lasing from InAs/InP quantum-dash lasers. 2011 Numerical Simulation of Optoelectronic Devices. doi:10.1109/nusod.2011.6041186

Publisher
Institute of Electrical and Electronics Engineers (IEEE)

Journal
2011 Numerical Simulation of Optoelectronic Devices

Conference/Event Name
11th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2011

DOI
10.1109/NUSOD.2011.6041186

Permanent link to this record
http://hdl.handle.net/10754/564422
Collections
Conference Papers
Computational Physics and Materials Science (CPMS)
Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division
Electrical and Computer Engineering Program
Material Science and Engineering Program
Photonics Laboratory
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