Theoretical observation of two state lasing from InAs/InP quantum-dash lasers

Type
Conference Paper
Authors
Khan, Mohammed Zahed Mustafa cc
Ng, Tien Khee cc
Schwingenschlögl, Udo cc
Ooi, Boon S. cc
KAUST Department
Physical Sciences and Engineering (PSE) Division
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Materials Science and Engineering Program
Electrical Engineering Program
Computational Physics and Materials Science (CPMS)
Photonics Laboratory
Date
2011-09

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Abstract
The effect of cavity length on the lasing wavelength of InAs/InP quantum dash (Qdash) laser is examined using the carrier-photon rate equation model including the carrier relaxation process from the Qdash ground state and excited state. Both, homogeneous and inhomogeneous broadening has been incorporated in the model. We show that ground state lasing occurs with longer cavity lasers and excited state lasing occurs from relatively short cavity lasers. © 2011 IEEE.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Journal
2011 Numerical Simulation of Optoelectronic Devices
Conference/Event name
11th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2011
ISBN
9781612848785
ISSN
21583234
DOI
10.1109/NUSOD.2011.6041186
Handle URI
http://hdl.handle.net/10754/564422
Collections
Conference Papers