Theoretical observation of two state lasing from InAs/InP quantum-dash lasers
Type
Conference PaperKAUST Department
Computational Physics and Materials Science (CPMS)Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Material Science and Engineering Program
Photonics Laboratory
Physical Science and Engineering (PSE) Division
Date
2011-09Permanent link to this record
http://hdl.handle.net/10754/564422
Metadata
Show full item recordAbstract
The effect of cavity length on the lasing wavelength of InAs/InP quantum dash (Qdash) laser is examined using the carrier-photon rate equation model including the carrier relaxation process from the Qdash ground state and excited state. Both, homogeneous and inhomogeneous broadening has been incorporated in the model. We show that ground state lasing occurs with longer cavity lasers and excited state lasing occurs from relatively short cavity lasers. © 2011 IEEE.Citation
Khan, M. Z. M., Ng, T. K., Schwingenschlogl, U., & Ooi, B. S. (2011). Theoretical observation of two state lasing from InAs/InP quantum-dash lasers. 2011 Numerical Simulation of Optoelectronic Devices. doi:10.1109/nusod.2011.6041186Conference/Event name
11th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2011ISBN
9781612848785ae974a485f413a2113503eed53cd6c53
10.1109/NUSOD.2011.6041186