Resonant tunnel magnetoresistance in a double magnetic tunnel junction
KAUST DepartmentPhysical Sciences and Engineering (PSE) Division
Sensing, Magnetism and Microsystems Lab
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Permanent link to this recordhttp://hdl.handle.net/10754/564418
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AbstractWe present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can be aligned parallel or antiparallel with respect to the fixed magnetizations of the left FML and right FMR ferromagnetic electrodes. The transmission coefficients for components of the spin-dependent current, and TMR are calculated as a function of the applied voltage. As a result, we found a high resonant TMR. Thus, DMTJ can serve as highly effective magnetic nanosensor for biological applications, or as magnetic memory cells by switching the magnetization of the inner ferromagnetic layer FMW.© Springer Science+Business Media, LLC 2011.
SponsorsThe work was supported in part by the Ministry of Education and Science of Russian Federation, and the bilateral program RFBR (Project No. 10-02-91225-CT_a)-TUBITAK (No. 209T061).