Resonant tunnel magnetoresistance in a double magnetic tunnel junction
Type
ArticleKAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Physical Science and Engineering (PSE) Division
Sensing, Magnetism and Microsystems Lab
Date
2011-08-09Online Publication Date
2011-08-09Print Publication Date
2012-12Permanent link to this record
http://hdl.handle.net/10754/564418
Metadata
Show full item recordAbstract
We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can be aligned parallel or antiparallel with respect to the fixed magnetizations of the left FML and right FMR ferromagnetic electrodes. The transmission coefficients for components of the spin-dependent current, and TMR are calculated as a function of the applied voltage. As a result, we found a high resonant TMR. Thus, DMTJ can serve as highly effective magnetic nanosensor for biological applications, or as magnetic memory cells by switching the magnetization of the inner ferromagnetic layer FMW.© Springer Science+Business Media, LLC 2011.Citation
Useinov, A. N., Useinov, N. K., Tagirov, L. R., & Kosel, J. (2011). Resonant Tunnel Magnetoresistance in a Double Magnetic Tunnel Junction. Journal of Superconductivity and Novel Magnetism, 25(8), 2573–2576. doi:10.1007/s10948-011-1221-6Sponsors
The work was supported in part by the Ministry of Education and Science of Russian Federation, and the bilateral program RFBR (Project No. 10-02-91225-CT_a)-TUBITAK (No. 209T061).Publisher
Springer Natureae974a485f413a2113503eed53cd6c53
10.1007/s10948-011-1221-6