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dc.contributor.authorQuevedo-López, Manuel Angel Quevedo
dc.contributor.authorWondmagegn, Wudyalew T.
dc.contributor.authorAlshareef, Husam N.
dc.contributor.authorRamírez-Bon, Rafael
dc.contributor.authorGnade, Bruce E.
dc.date.accessioned2015-08-04T06:25:58Z
dc.date.available2015-08-04T06:25:58Z
dc.date.issued2011-06-01
dc.identifier.issn15334880
dc.identifier.pmid21770215
dc.identifier.doi10.1166/jnn.2011.3425
dc.identifier.urihttp://hdl.handle.net/10754/564392
dc.description.abstractThe development of low temperature, thin film transistor processes that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, radiation detectors, etc. In this paper, we review the impact of gate dielectrics, contacts and semiconductor materials on thin film transistors for flexible electronics applications. We present our recent results to fully integrate hybrid complementary metal oxide semiconductors comprising inorganic and organic-based materials. In particular, we demonstrate novel gate dielectric stacks and semiconducting materials. The impact of source and drain contacts on device performance is also discussed. Copyright © 2011 American Scientific Publishers.
dc.publisherAmerican Scientific Publishers
dc.subjectContacts
dc.subjectDielectrics
dc.subjectFlexible electronics
dc.subjectSemiconductors
dc.subjectThin film
dc.subjectTransistors
dc.titleThin film transistors for flexible electronics: Contacts, dielectrics and semiconductors
dc.typeArticle
dc.contributor.departmentMaterials Science and Engineering Program
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.contributor.departmentFunctional Nanomaterials and Devices Research Group
dc.identifier.journalJournal of Nanoscience and Nanotechnology
dc.contributor.institutionDepartment of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, United States
dc.contributor.institutionDepartment of Electrical Engineering, University of Texas at Tyler, Tyler, TX 75799, United States
dc.contributor.institutionCINVESTAV, Unidad Queretaro, Libram. Norponiente 2000 Fracc. Real de Juriquilla, Querétaro 76230, Qro, Mexico
kaust.personAlshareef, Husam N.


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