The influence of quantum-dash height on the differential gain and linewidth enhancement factor of InAs/InP quantum-dash lasers
Type
Conference PaperKAUST Department
Computational Physics and Materials Science (CPMS)Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Material Science and Engineering Program
Photonics Laboratory
Physical Science and Engineering (PSE) Division
Date
2010-12Permanent link to this record
http://hdl.handle.net/10754/564324
Metadata
Show full item recordAbstract
We present a rate equation model for the analysis of static and dynamic characteristics of InAs/InP quantumdash (Qdash) semiconductor laser. The model is applied to calculate the differential modal gain (DMG) and linewidth enhancement factor (LEF) of the Qdash laser. In addition, the effect of varying the Qdash height on these dynamic parameters is evaluated. The model predicts a decrease in the differential modal gain with increase in the Qdash height while the LEF value generally does not get affected. The LEF and DMG of the Qdash laser at peak gain attain a value of ∼1-1.5 and ∼0.6×10 -15 -1.0×10-15 cm2, respectively. © 2010 IEEE.Citation
Khan, Z. M., Ng, T. K., Schwingenschlogl, U., & Ooi, B. S. (2010). The influence of quantum-dash height on the differential gain and linewidth enhancement factor of InAs/InP quantum-dash lasers. 7th International Symposium on High-Capacity Optical Networks and Enabling Technologies. doi:10.1109/honet.2010.5715755Conference/Event name
7th International Symposium on High-Capacity Optical Networks and Enabling Technologies, HONET 2010ISBN
9781424499243ae974a485f413a2113503eed53cd6c53
10.1109/HONET.2010.5715755