The influence of quantum-dash height on the differential gain and linewidth enhancement factor of InAs/InP quantum-dash lasers

We present a rate equation model for the analysis of static and dynamic characteristics of InAs/InP quantumdash (Qdash) semiconductor laser. The model is applied to calculate the differential modal gain (DMG) and linewidth enhancement factor (LEF) of the Qdash laser. In addition, the effect of varying the Qdash height on these dynamic parameters is evaluated. The model predicts a decrease in the differential modal gain with increase in the Qdash height while the LEF value generally does not get affected. The LEF and DMG of the Qdash laser at peak gain attain a value of ∼1-1.5 and ∼0.6×10 -15 -1.0×10-15 cm2, respectively. © 2010 IEEE.

Citation

Khan, Z. M., Ng, T. K., Schwingenschlogl, U., & Ooi, B. S. (2010). The influence of quantum-dash height on the differential gain and linewidth enhancement factor of InAs/InP quantum-dash lasers. 7th International Symposium on High-Capacity Optical Networks and Enabling Technologies. doi:10.1109/honet.2010.5715755

ISBN

9781424499243

DOI

10.1109/HONET.2010.5715755

Collections

Conference Papers; Physical Science and Engineering (PSE) Division; Electrical and Computer Engineering Program; Material Science and Engineering Program; Photonics Laboratory; Computational Physics and Materials Science (CPMS); Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division