The influence of quantum-dash height on the differential gain and linewidth enhancement factor of InAs/InP quantum-dash lasers

Khan, Mohammed Zahed Mustafa; Ng, Tien Khee; Schwingenschlögl, Udo; Ooi, Boon S.

Type

Conference Paper

Authors

Khan, Mohammed Zahed Mustafa

Ng, Tien Khee

Schwingenschlögl, Udo

Ooi, Boon S.

KAUST Department

Physical Sciences and Engineering (PSE) Division
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Materials Science and Engineering Program
Electrical Engineering Program
Computational Physics and Materials Science (CPMS)
Photonics Laboratory

Date

2010-12

Metadata

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Abstract

We present a rate equation model for the analysis of static and dynamic characteristics of InAs/InP quantumdash (Qdash) semiconductor laser. The model is applied to calculate the differential modal gain (DMG) and linewidth enhancement factor (LEF) of the Qdash laser. In addition, the effect of varying the Qdash height on these dynamic parameters is evaluated. The model predicts a decrease in the differential modal gain with increase in the Qdash height while the LEF value generally does not get affected. The LEF and DMG of the Qdash laser at peak gain attain a value of ∼1-1.5 and ∼0.6×10 -15 -1.0×10-15 cm2, respectively. © 2010 IEEE.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Journal

7th International Symposium on High-capacity Optical Networks and Enabling Technologies

Conference/Event name

7th International Symposium on High-Capacity Optical Networks and Enabling Technologies, HONET 2010

ISBN

9781424499243