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    Annealing effect on the performance of sputtering deposited Metglas thin films

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    Type
    Conference Paper
    Authors
    Cai, Liang
    Hu, Jing
    Prorok, Barton C.
    Gooneratne, Chinthaka Pasan
    Kosel, Jürgen cc
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    Physical Science and Engineering (PSE) Division
    Sensing, Magnetism and Microsystems Lab
    Date
    2010-12
    Permanent link to this record
    http://hdl.handle.net/10754/564318
    
    Metadata
    Show full item record
    Abstract
    Magnetostrictive sensors based on ferromagnetic materials have been widely used in detecting chemicals and biological species. The Metglas™ 2826MB is one of the bulk strip materials that is employed as the sensor platform. However, the sensitivity is limited by the large size of the sensors itself. In order to improve the sensitivity, we have developed a process to fabricate microscale sensors of 500 × 100 μm in size using conventional MEMS technology. As-deposited, the sensors suffered from internal stress, which was released by a annealing the sensors at 215 °C for two hours under vacuum condition. The annealing process improved the magnetic properties of the thin films and increased the resonant frequency of the sensor by 214 kHz.
    Citation
    Liang, C., Hu, J., Prorok, B. C., Gooneratne, C., & Kosel, J. (2010). Annealing Effect on the Performance of Sputtering Deposited Metglas Thin Films. Materials Science Forum, 667-669, 1207–1212. doi:10.4028/www.scientific.net/msf.667-669.1207
    Publisher
    Trans Tech Publications, Ltd.
    Journal
    Materials Science Forum
    Conference/Event name
    5th International Conference on Nanomaterials by Severe Plastic Deformation, NanoSPD5
    ISBN
    9783037850077
    DOI
    10.4028/www.scientific.net/MSF.667-669.1207
    ae974a485f413a2113503eed53cd6c53
    10.4028/www.scientific.net/MSF.667-669.1207
    Scopus Count
    Collections
    Conference Papers; Physical Science and Engineering (PSE) Division; Electrical and Computer Engineering Program; Sensing, Magnetism and Microsystems Lab; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

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