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dc.contributor.authorSun, Jian
dc.contributor.authorKosel, Jürgen
dc.contributor.authorGooneratne, Chinthaka Pasan
dc.contributor.authorSoh, Yeongah
dc.date.accessioned2015-08-04T06:23:21Z
dc.date.available2015-08-04T06:23:21Z
dc.date.issued2010-11
dc.identifier.citationSun, J., Kosel, J., Gooneratne, C., & Soh, Y.-A. (2010). Optimization of an Extraordinary Magnetoresistance sensor in the semiconductor-metal hybrid structure. 2010 IEEE Sensors. doi:10.1109/icsens.2010.5690566
dc.identifier.isbn9781424481682
dc.identifier.doi10.1109/ICSENS.2010.5690566
dc.identifier.urihttp://hdl.handle.net/10754/564316
dc.description.abstractThe purpose of this paper is to show by numerical computation how geometric parameters influence the Extraordinary Magnetoresistance (EMR) effect in an InAs-Au hybrid device. Symmetric IVVI and VIIV configurations were considered. The results show that the width and the length-width ratio of InAs are important geometrical parameters for the EMR effect along with the placement of the leads. Approximately the same EMR effect was obtained for both IVVI and VIIV configurations when the applied magnetic field ranged from -1T to 1T. In an optimized geometry the EMR effect can reach 43000% at 1Tesla for IVVI and 42700% at 1 Tesla for the VIIV configuration. ©2010 IEEE.
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.titleOptimization of an extraordinary magnetoresistance sensor in the semiconductor-metal hybrid structure
dc.typeConference Paper
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentMechanical Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentSensing, Magnetism and Microsystems Lab
dc.identifier.journal2010 IEEE Sensors
dc.conference.date1 November 2010 through 4 November 2010
dc.conference.name9th IEEE Sensors Conference 2010, SENSORS 2010
dc.conference.locationWaikoloa, HI
dc.contributor.institutionDepartment of Materials, Imperial College London, London SW7 2AZ, United Kingdom
kaust.personSun, Jian
kaust.personKosel, Jürgen
kaust.personGooneratne, Chinthaka Pasan


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