Optimization of an extraordinary magnetoresistance sensor in the semiconductor-metal hybrid structure
Type
Conference PaperKAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Mechanical Engineering Program
Physical Science and Engineering (PSE) Division
Sensing, Magnetism and Microsystems Lab
Date
2010-11Permanent link to this record
http://hdl.handle.net/10754/564316
Metadata
Show full item recordAbstract
The purpose of this paper is to show by numerical computation how geometric parameters influence the Extraordinary Magnetoresistance (EMR) effect in an InAs-Au hybrid device. Symmetric IVVI and VIIV configurations were considered. The results show that the width and the length-width ratio of InAs are important geometrical parameters for the EMR effect along with the placement of the leads. Approximately the same EMR effect was obtained for both IVVI and VIIV configurations when the applied magnetic field ranged from -1T to 1T. In an optimized geometry the EMR effect can reach 43000% at 1Tesla for IVVI and 42700% at 1 Tesla for the VIIV configuration. ©2010 IEEE.Citation
Sun, J., Kosel, J., Gooneratne, C., & Soh, Y.-A. (2010). Optimization of an Extraordinary Magnetoresistance sensor in the semiconductor-metal hybrid structure. 2010 IEEE Sensors. doi:10.1109/icsens.2010.5690566Journal
2010 IEEE SensorsConference/Event name
9th IEEE Sensors Conference 2010, SENSORS 2010ISBN
9781424481682ae974a485f413a2113503eed53cd6c53
10.1109/ICSENS.2010.5690566