Quantitative strain analysis for advanced CMOS technology by Nano Beam Diffraction
MetadataShow full item record
AbstractNano Beam Diffraction has been used to analyze the local strain distribution in MOS transistors. The influence of wafer process on the channel strain has been systematically analyzed in this paper. The source/drain implantation can cause a little strain loss but the silicidation step is the key process in which dramatic strain loss has been found. © 2010 IEEE.
Journal2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits
Conference/Event name17th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2010