A novel match-line selective charging scheme for high-speed, low-power and noise-tolerant content-addressable memory
Type
Conference PaperKAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Integrated Nanotechnology Lab
Physical Science and Engineering (PSE) Division
Date
2010-06Permanent link to this record
http://hdl.handle.net/10754/564280
Metadata
Show full item recordAbstract
Content-addressable memory (CAM) is an essential component for high-speed lookup intensive applications. This paper presents a match-line selective charging technique to increase speed and reduce the energy per bit per search while increasing the noise-tolerance. Simulation in TSMC 0.18 μm technology with 64×72 Ternary CAM shows the match-line energy reduction of 45% compared to the conventional currentsaving scheme with the reduction of minimum cycle time by 68% and the improvement of noise-tolerance by 96%.Citation
Hasan, M. M., Rashid, A. B. M. H., & Hussain, M. M. (2010). A novel match-line selective charging scheme for high-speed, low-power and noise-tolerant content-addressable memory. 2010 International Conference on Intelligent and Advanced Systems. doi:10.1109/icias.2010.5716226Conference/Event name
2010 International Conference on Intelligent and Advanced Systems, ICIAS 2010ISBN
9781424466238ae974a485f413a2113503eed53cd6c53
10.1109/ICIAS.2010.5716226