A novel match-line selective charging scheme for high-speed, low-power and noise-tolerant content-addressable memory
KAUST DepartmentElectrical Engineering Program
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Integrated Nanotechnology Lab
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AbstractContent-addressable memory (CAM) is an essential component for high-speed lookup intensive applications. This paper presents a match-line selective charging technique to increase speed and reduce the energy per bit per search while increasing the noise-tolerance. Simulation in TSMC 0.18 μm technology with 64×72 Ternary CAM shows the match-line energy reduction of 45% compared to the conventional currentsaving scheme with the reduction of minimum cycle time by 68% and the improvement of noise-tolerance by 96%.
Conference/Event name2010 International Conference on Intelligent and Advanced Systems, ICIAS 2010