A novel match-line selective charging scheme for high-speed, low-power and noise-tolerant content-addressable memory

Type
Conference Paper
Authors
Hasan, Muhammad Mubashwar
Rashid, Abdul B M Harun Ur
Hussain, Muhammad Mustafa cc
KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Integrated Nanotechnology Lab
Physical Science and Engineering (PSE) Division
Date
2010-06
Permanent link to this record
http://hdl.handle.net/10754/564280

Metadata
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Abstract
Content-addressable memory (CAM) is an essential component for high-speed lookup intensive applications. This paper presents a match-line selective charging technique to increase speed and reduce the energy per bit per search while increasing the noise-tolerance. Simulation in TSMC 0.18 μm technology with 64×72 Ternary CAM shows the match-line energy reduction of 45% compared to the conventional currentsaving scheme with the reduction of minimum cycle time by 68% and the improvement of noise-tolerance by 96%.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Journal
2010 International Conference on Intelligent and Advanced Systems
Conference/Event name
2010 International Conference on Intelligent and Advanced Systems, ICIAS 2010
ISBN
9781424466238
DOI
10.1109/ICIAS.2010.5716226
Collections
Conference Papers; Physical Science and Engineering (PSE) Division; Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division