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dc.contributor.authorGarcía-Cerda, L. A.
dc.contributor.authorPuente-Urbina, B. A.
dc.contributor.authorQuevedo-López, Manuel Angel Quevedo
dc.contributor.authorGnade, Bruce E.
dc.contributor.authorBaldenegro-Pérez, Leonardo Aurelio
dc.contributor.authorAlshareef, Husam N.
dc.contributor.authorHernández-Landaverde, Martín Adelaido
dc.date.accessioned2015-08-04T06:21:38Z
dc.date.available2015-08-04T06:21:38Z
dc.date.issued2010-03
dc.identifier.isbn087849281X; 9780878492817
dc.identifier.issn02555476
dc.identifier.doi10.4028/www.scientific.net/MSF.644.113
dc.identifier.urihttp://hdl.handle.net/10754/564273
dc.description.abstractIn this study, HfxZr1-xO2 (0 < x < 1) thin films were deposited on silicon wafers using a dip-coating technique and by using a precursor solution prepared by the Pechini route. The effects of annealing temperature on the structure and morphological properties of the proposed films were investigated. HfxZr1-xO2 thin films with 1, 3 and 5 layers were annealed in air for 2 h at 600 and 800 °C and the structural and morphological properties studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD results show that the films have monoclinic and tetragonal structure depending of the Hf and Zr concentration. SEM photographs show that all films consist of nanocrystalline grains with sizes in the range of 6 - 13 nm. The total film thickness is about 90 nm. © (2010) Trans Tech Publications.
dc.publisherTrans Tech Publications
dc.subjectDielectric materials
dc.subjectHafnium oxide
dc.subjectPechini route
dc.subjectThin films
dc.subjectZirconium oxide
dc.titleStructural and morphological properties of HfxZr 1-xO2 thin films prepared by Pechini route
dc.typeConference Paper
dc.contributor.departmentMaterials Science and Engineering Program
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.contributor.departmentFunctional Nanomaterials and Devices Research Group
dc.identifier.journalMaterials Science Forum
dc.conference.date29 September 2009 through 2 October 2009
dc.conference.name1st Joint Advanced Electron Microscopy School for Nanomaterials and the Workshop on Nanomaterials, AEM-NANOMAT'09
dc.conference.locationSaltillo, Coahuila
dc.contributor.institutionCentro de Investigación en Química Aplicada, Departamento de Materiales Avanzados, Blvd. Enrique Reyna Hermosillo 140, C.P. 25253, Saltillo, Coahuila, Mexico
dc.contributor.institutionDepartment of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, United States
dc.contributor.institutionCentro de Investigación y de Estudios Avanzados Del IPN, Libramiento Norponiente 2000, C.P. 76010, Santiago de Querétaro, Qro., Mexico
kaust.personAlshareef, Husam N.


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