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dc.contributor.authorDimas, Clara E.
dc.contributor.authorDjie, Hery Susanto
dc.contributor.authorOoi, Boon S.
dc.date.accessioned2015-08-04T06:21:22Z
dc.date.available2015-08-04T06:21:22Z
dc.date.issued2010
dc.identifier.citationDimas, C. E., Djie, H. S., & Ooi, B. S. (2010). Gain optimization method of a DQW superluminescent diode with broad multi-state emission. 2010 Photonics Global Conference. doi:10.1109/pgc.2010.5706118
dc.identifier.isbn9781424498826
dc.identifier.doi10.1109/PGC.2010.5706118
dc.identifier.urihttp://hdl.handle.net/10754/564267
dc.description.abstractOptimizing gain through systematic methods of varying current injection schemes analytically is significant to maximize experimentally device yield and evaluation. Various techniques are used to calculate the amplified spontaneous emission (ASE) gain for light emitting devices consisting of single-section and multiple-sections of even length. Recently double quantum well (DQW) superluminescent diodes (SLD) have shown a broad multi-state emission due to mutlielectrodes of non-equal lengths and at high non-equal current densities. In this study, we adopt an improved method utilizing an ASE intensity ratio to calibrate a gain curve based on the sum of the measured ASE spectra to efficiently estimate the gain. Although the laser gain for GaAs/AlGaAs material is well studied, the ASE gain of SLD devices has not been systematically studied particular to further explain the multiple-state emission observed in fabricated devices. In addition a unique gain estimate was achieved where the excited state gain clamps prior to the ground state due to approaching saturation levels. In our results, high current densities in long sectioned active regions achieved sufficient un-truncated gain that show evidence of excited state emission has been observed.
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.titleGain optimization method of a DQW superluminescent diode with broad multi-state emission
dc.typeConference Paper
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentPhotonics Laboratory
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journal2010 Photonics Global Conference
dc.conference.date14 December 2010 through 16 December 2010
dc.conference.name2010 Photonics Global Conference, PGC 2010
dc.conference.locationOrchard
dc.contributor.institutionDepartment of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, United States
dc.contributor.institutionMasdar Institute, United Arab Emirates
dc.contributor.institutionJDS Uniphase, United States
kaust.personOoi, Boon S.


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