Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon
Type
ArticleAuthors
Ghoneim, Mohamed T.
Rojas, Jhonathan Prieto

Young, Chadwin D.
Bersuker, Gennadi
Hussain, Muhammad Mustafa

KAUST Department
Electrical Engineering ProgramIntegrated Nanotechnology Lab
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Date
2015-06Permanent link to this record
http://hdl.handle.net/10754/564182
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We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard bulk mono-crystalline silicon substrate. A lifetime projection is extracted using statistical analysis of the ramping voltage (Vramp) breakdown and time dependent dielectric breakdown data. The obtained flexible MOSCAPs operational voltages satisfying the 10 years lifetime benchmark are compared to those of the control MOSCAPs, which are not peeled off from the silicon wafer. © 2014 IEEE.Citation
Ghoneim, M. T., Rojas, J. P., Young, C. D., Bersuker, G., & Hussain, M. M. (2015). Electrical Analysis of High Dielectric Constant Insulator and Metal Gate Metal Oxide Semiconductor Capacitors on Flexible Bulk Mono-Crystalline Silicon. IEEE Transactions on Reliability, 64(2), 579–585. doi:10.1109/tr.2014.2371054Journal
IEEE Transactions on Reliabilityae974a485f413a2113503eed53cd6c53
10.1109/TR.2014.2371054