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dc.contributor.authorLien, Der-Hsien
dc.contributor.authorKang, Jeongseuk
dc.contributor.authorAmani, Matin
dc.contributor.authorChen, Kevin
dc.contributor.authorTosun, Mahmut
dc.contributor.authorWang, Hsinping
dc.contributor.authorRoy, Tania
dc.contributor.authorEggleston, Michael S.
dc.contributor.authorWu, Ming C.
dc.contributor.authorDubey, Madan
dc.contributor.authorLee, Sichen
dc.contributor.authorHe, Jr-Hau
dc.contributor.authorJavey, Ali
dc.date.accessioned2015-08-03T12:30:02Z
dc.date.available2015-08-03T12:30:02Z
dc.date.issued2015-01-26
dc.identifier.issn15306984
dc.identifier.doi10.1021/nl504632u
dc.identifier.urihttp://hdl.handle.net/10754/564054
dc.description.abstractWhen light is incident on 2D transition metal dichalcogenides (TMDCs), it engages in multiple reflections within underlying substrates, producing interferences that lead to enhancement or attenuation of the incoming and outgoing strength of light. Here, we report a simple method to engineer the light outcoupling in semiconducting TMDCs by modulating their dielectric surroundings. We show that by modulating the thicknesses of underlying substrates and capping layers, the interference caused by substrate can significantly enhance the light absorption and emission of WSe2, resulting in a ∼11 times increase in Raman signal and a ∼30 times increase in the photoluminescence (PL) intensity of WSe2. On the basis of the interference model, we also propose a strategy to control the photonic and optoelectronic properties of thin-layer WSe2. This work demonstrates the utilization of outcoupling engineering in 2D materials and offers a new route toward the realization of novel optoelectronic devices, such as 2D LEDs and solar cells.
dc.publisherAmerican Chemical Society (ACS)
dc.subject2D materials
dc.subjectlight outcoupling
dc.subjectphotoluminescence
dc.subjectRaman
dc.subjectsubstrate interference
dc.titleEngineering light outcoupling in 2D materials
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentNano Energy Lab
dc.identifier.journalNano Letters
dc.contributor.institutionElectrical Engineering and Computer Sciences, University of CaliforniaBerkeley, CA, United States
dc.contributor.institutionMaterials Sciences Division, Lawrence Berkeley National LaboratoryBerkeley, CA, United States
dc.contributor.institutionDepartment of Electrical Engineering, Institute of Electronics Engineering, National Taiwan UniversityTaipei, Taiwan
dc.contributor.institutionSensors and Electron Devices Dir., U.S. Army Research LaboratoryAdelphi, MD, United States
kaust.personHe, Jr-Hau
kaust.personLien, Der-Hsien
kaust.personWang, Hsinping
dc.date.published-online2015-01-26
dc.date.published-print2015-02-11


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