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    Indium oxide thin-film transistors processed at low temperature via ultrasonic spray pyrolysis

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    Type
    Article
    Authors
    Faber, Hendrik
    Lin, Yenhung
    Thomas, Stuart R.
    Zhao, Kui cc
    Pliatsikas, Nikos
    McLachlan, Martyn A.
    Amassian, Aram cc
    Patsalas, Panos A.
    Anthopoulos, Thomas D. cc
    KAUST Department
    KAUST Solar Center (KSC)
    Material Science and Engineering Program
    Organic Electronics and Photovoltaics Group
    Physical Science and Engineering (PSE) Division
    Date
    2014-12-24
    Online Publication Date
    2014-12-24
    Print Publication Date
    2015-01-14
    Permanent link to this record
    http://hdl.handle.net/10754/564012
    
    Metadata
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    Abstract
    The use of ultrasonic spray pyrolysis is demonstrated for the growth of polycrystalline, highly uniform indium oxide films at temperatures in the range of 200-300 °C in air using an aqueous In(NO3)3 precursor solution. Electrical characterization of as-deposited films by field-effect measurements reveals a strong dependence of the electron mobility on deposition temperature. Transistors fabricated at ∼250 °C exhibit optimum performance with maximum electron mobility values in the range of 15-20 cm2 V -1 s-1 and current on/off ratio in excess of 106. Structural and compositional analysis of as-grown films by means of X-ray diffraction, diffuse scattering, and X-ray photoelectron spectroscopy reveal that layers deposited at 250 °C are denser and contain a reduced amount of hydroxyl groups as compared to films grown at either lower or higher temperatures. Microstructural analysis of semiconducting films deposited at 250 °C by high resolution cross-sectional transmission electron microscopy reveals that as-grown layers are extremely thin (∼7 nm) and composed of laterally large (30-60 nm) highly crystalline In2O3 domains. These unique characteristics of the In2O3 films are believed to be responsible for the high electron mobilities obtained from transistors fabricated at 250 °C. Our work demonstrates the ability to grow high quality low-dimensional In2O3 films and devices via ultrasonic spray pyrolysis over large area substrates while at the same time it provides guidelines for further material and device improvements.
    Citation
    Faber, H., Lin, Y.-H., Thomas, S. R., Zhao, K., Pliatsikas, N., McLachlan, M. A., … Anthopoulos, T. D. (2014). Indium Oxide Thin-Film Transistors Processed at Low Temperature via Ultrasonic Spray Pyrolysis. ACS Applied Materials & Interfaces, 7(1), 782–790. doi:10.1021/am5072139
    Sponsors
    H.F, S.T., and T.D.A. are grateful to the European Research Council (ERC) AMPRO project no. 280221 for financial support.
    Publisher
    American Chemical Society (ACS)
    Journal
    ACS Applied Materials & Interfaces
    DOI
    10.1021/am5072139
    ae974a485f413a2113503eed53cd6c53
    10.1021/am5072139
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program; KAUST Solar Center (KSC)

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