Compensated readout for high-density MOS-gated memristor crossbar array
AuthorsZidan, Mohammed A.
Salem, Ahmed Sultan
Fahmy, Hossam Aly Hassan
Salama, Khaled N.
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
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AbstractLeakage current is one of the main challenges facing high-density MOS-gated memristor arrays. In this study, we show that leakage current ruins the memory readout process for high-density arrays, and analyze the tradeoff between the array density and its power consumption. We propose a novel readout technique and its underlying circuitry, which is able to compensate for the transistor leakage-current effect in the high-density gated memristor array.