Compensated readout for high-density MOS-gated memristor crossbar array
AuthorsZidan, Mohammed A.
Salem, Ahmed Sultan
Fahmy, Hossam Aly Hassan
Salama, Khaled N.
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Physical Science and Engineering (PSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/563991
MetadataShow full item record
AbstractLeakage current is one of the main challenges facing high-density MOS-gated memristor arrays. In this study, we show that leakage current ruins the memory readout process for high-density arrays, and analyze the tradeoff between the array density and its power consumption. We propose a novel readout technique and its underlying circuitry, which is able to compensate for the transistor leakage-current effect in the high-density gated memristor array.
CitationZidan, M. A., Omran, H., Sultan, A., Fahmy, H. A. H., & Salama, K. N. (2015). Compensated Readout for High-Density MOS-Gated Memristor Crossbar Array. IEEE Transactions on Nanotechnology, 14(1), 3–6. doi:10.1109/tnano.2014.2363352