KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Integrated Nanotechnology Lab
Electrical Engineering Program
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AbstractBy integrating 3-D nonplanar fins and 2-D ultrathin bodies, wavy FinFETs merge two formerly competing technologies on a silicon-on-insulator platform to deliver enhanced transistor performance compared with conventional trigate FinFETs with unprecedented levels of chip-area efficiency. This makes it suitable for ultralarge-scale integration high-performance logic at and beyond the 10-nm technology node.
SponsorsThis work was supported by the Office of Competitive Research Funds through the King Abdullah University of Science and Technology, Thuwal, Saudi Arabia, under Grant CRG-1-2012-HUS-008. The review of this paper was arranged by Editor D. Esseni.