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dc.contributor.authorKhan, Yasser
dc.contributor.authorCaraveo-Frescas, Jesus Alfonso
dc.contributor.authorAlshareef, Husam N.
dc.date.accessioned2015-08-03T12:21:45Z
dc.date.available2015-08-03T12:21:45Z
dc.date.issued2015-01
dc.identifier.issn15661199
dc.identifier.doi10.1016/j.orgel.2014.10.034
dc.identifier.urihttp://hdl.handle.net/10754/563981
dc.description.abstractHere, we report hybrid organic/inorganic ferroelectric memory with multilevel information storage using transparent p-type SnO semiconductor and ferroelectric P(VDF-TrFE) polymer. The dual gate devices include a top ferroelectric field-effect transistor (FeFET) and a bottom thin-film transistor (TFT). The devices are all fabricated at low temperatures (∼200°C), and demonstrate excellent performance with high hole mobility of 2.7 cm2 V-1 s-1, large memory window of ∼18 V, and a low sub-threshold swing ∼-4 V dec-1. The channel conductance of the bottom-TFT and the top-FeFET can be controlled independently by the bottom and top gates, respectively. The results demonstrate multilevel nonvolatile information storage using ferroelectric memory devices with good retention characteristics.
dc.description.sponsorshipResearch reported in this publication has been supported by King Abdullah University of Science and Technology (KAUST) and by Saudi Basic Industries (SABIC) Grant No. 2000000015.
dc.publisherElsevier BV
dc.subjectDual gate
dc.subjectFerroelectric
dc.subjectMemory
dc.subjectp-type semiconductor
dc.subjectTin monoxide
dc.titleHybrid dual gate ferroelectric memory for multilevel information storage
dc.typeArticle
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentFunctional Nanomaterials and Devices Research Group
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalOrganic Electronics
kaust.personCaraveo-Frescas, Jesus Alfonso
kaust.personAlshareef, Husam N.
kaust.personKhan, Yasser


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