Hybrid dual gate ferroelectric memory for multilevel information storage
KAUST DepartmentElectrical Engineering Program
Functional Nanomaterials and Devices Research Group
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/563981
MetadataShow full item record
AbstractHere, we report hybrid organic/inorganic ferroelectric memory with multilevel information storage using transparent p-type SnO semiconductor and ferroelectric P(VDF-TrFE) polymer. The dual gate devices include a top ferroelectric field-effect transistor (FeFET) and a bottom thin-film transistor (TFT). The devices are all fabricated at low temperatures (∼200°C), and demonstrate excellent performance with high hole mobility of 2.7 cm2 V-1 s-1, large memory window of ∼18 V, and a low sub-threshold swing ∼-4 V dec-1. The channel conductance of the bottom-TFT and the top-FeFET can be controlled independently by the bottom and top gates, respectively. The results demonstrate multilevel nonvolatile information storage using ferroelectric memory devices with good retention characteristics.
CitationKhan, M. A., Caraveo-Frescas, J. A., & Alshareef, H. N. (2015). Hybrid dual gate ferroelectric memory for multilevel information storage. Organic Electronics, 16, 9–17. doi:10.1016/j.orgel.2014.10.034
SponsorsResearch reported in this publication has been supported by King Abdullah University of Science and Technology (KAUST) and by Saudi Basic Industries (SABIC) Grant No. 2000000015.