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dc.contributor.authorPark, Jihoon
dc.contributor.authorKurra, Narendra
dc.contributor.authorAlMadhoun, M. N.
dc.contributor.authorOdeh, Ihab N.
dc.contributor.authorAlshareef, Husam N.
dc.date.accessioned2015-08-03T12:21:12Z
dc.date.available2015-08-03T12:21:12Z
dc.date.issued2015
dc.identifier.issn20507534
dc.identifier.doi10.1039/c4tc02079k
dc.identifier.urihttp://hdl.handle.net/10754/563966
dc.description.abstractWe report a simple two-step annealing scheme for the fabrication of stable non-volatile memory devices employing poly(vinylidene fluoride) (PVDF) polymer thin-films. The proposed two-step annealing scheme comprises the crystallization of the ferroelectric gamma-phase during the first step and enhancement of the PVDF film dense morphology during the second step. Moreover, when we extended the processing time of the second step, we obtained good hysteresis curves down to 1 Hz, the first such report for ferroelectric PVDF films. The PVDF films also exhibit a coercive field of 113 MV m-1 and a ferroelectric polarization of 5.4 μC cm-2. © The Royal Society of Chemistry 2015.
dc.description.sponsorshipResearch reported in this publication was supported by the King Abdullah University of Science and Technology (KAUST). The authors also would like to acknowledge the Saudi Basic Industries Corporation (SABIC) Grant no. RGC/3/1094-01. N.K. acknowledges the support from SABIC Postdoctoral Fellowship.
dc.publisherRoyal Society of Chemistry (RSC)
dc.titleA two-step annealing process for enhancing the ferroelectric properties of poly(vinylidene fluoride) (PVDF) devices
dc.typeArticle
dc.contributor.departmentFunctional Nanomaterials and Devices Research Group
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentSABIC - Corporate Research and Innovation Center (CRI) at KAUST
dc.identifier.journalJ. Mater. Chem. C
kaust.personPark, Jihoon
kaust.personKurra, Narendra
kaust.personAlshareef, Husam N.


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