A two-step annealing process for enhancing the ferroelectric properties of poly(vinylidene fluoride) (PVDF) devices
KAUST DepartmentFunctional Nanomaterials and Devices Research Group
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
SABIC - Corporate Research and Innovation Center (CRI) at KAUST
Permanent link to this recordhttp://hdl.handle.net/10754/563966
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AbstractWe report a simple two-step annealing scheme for the fabrication of stable non-volatile memory devices employing poly(vinylidene fluoride) (PVDF) polymer thin-films. The proposed two-step annealing scheme comprises the crystallization of the ferroelectric gamma-phase during the first step and enhancement of the PVDF film dense morphology during the second step. Moreover, when we extended the processing time of the second step, we obtained good hysteresis curves down to 1 Hz, the first such report for ferroelectric PVDF films. The PVDF films also exhibit a coercive field of 113 MV m-1 and a ferroelectric polarization of 5.4 μC cm-2. © The Royal Society of Chemistry 2015.
SponsorsResearch reported in this publication was supported by the King Abdullah University of Science and Technology (KAUST). The authors also would like to acknowledge the Saudi Basic Industries Corporation (SABIC) Grant no. RGC/3/1094-01. N.K. acknowledges the support from SABIC Postdoctoral Fellowship.
PublisherRoyal Society of Chemistry (RSC)
JournalJ. Mater. Chem. C