Room to high temperature measurements of flexible SOI FinFETs with sub-20-nm fins
KAUST DepartmentElectrical Engineering Program
Integrated Nanotechnology Lab
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
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AbstractWe report the temperature dependence of the core electrical parameters and transport characteristics of a flexible version of fin field-effect transistor (FinFET) on silicon-on-insulator (SOI) with sub-20-nm wide fins and high-k/metal gate-stacks. For the first time, we characterize them from room to high temperature (150 °C) to show the impact of temperature variation on drain current, gate leakage current, and transconductance. Variation of extracted parameters, such as low-field mobility, subthreshold swing, threshold voltage, and ON-OFF current characteristics, is reported too. Direct comparison is made to a rigid version of the SOI FinFETs. The mobility degradation with temperature is mainly caused by phonon scattering mechanism. The overall excellent devices performance at high temperature after release is outlined proving the suitability of truly high-performance flexible inorganic electronics with such advanced architecture.
SponsorsThis work was supported by the King Abdullah University of Science and Technology, Jeddah, Saudi Arabia, through the Office of Competitive Research Funds under Grant CRG-1-2012-HUS-008. The review of this paper was arranged by Editor N. Bhat.