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dc.contributor.authorGhoneim, Mohamed T.
dc.contributor.authorZidan, Mohammed A.
dc.contributor.authorSalama, Khaled N.
dc.contributor.authorHussain, Muhammad Mustafa
dc.date.accessioned2015-08-03T12:16:09Z
dc.date.available2015-08-03T12:16:09Z
dc.date.issued2014-11
dc.identifier.issn00262692
dc.identifier.doi10.1016/j.mejo.2014.07.011
dc.identifier.urihttp://hdl.handle.net/10754/563834
dc.description.abstractThe advantages associated with neuromorphic computation are rich areas of complex research. We address the fabrication challenge of building neuromorphic devices on structurally foldable platform with high integration density. We present a CMOS compatible fabrication process to demonstrate for the first time memristive devices fabricated on bulk monocrystalline silicon (100) which is next transformed into a flexible thin sheet of silicon fabric with all the pre-fabricated devices. This process preserves the ultra-high integration density advantage unachievable on other flexible substrates. In addition, the memristive devices are of the size of a motor neuron and the flexible/folded architectural form factor is critical to match brain cortex's folded pattern for ultra-compact design.
dc.publisherElsevier BV
dc.subjectFoldable electronics
dc.subjectIntegration density
dc.subjectMemristive devices
dc.subjectNeuromorphic computing
dc.titleTowards neuromorphic electronics: Memristors on foldable silicon fabric
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentIntegrated Nanotechnology Lab
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentSensors Lab
dc.identifier.journalMicroelectronics Journal
kaust.personGhoneim, Mohamed T.
kaust.personZidan, Mohammed A.
kaust.personSalama, Khaled N.
kaust.personHussain, Muhammad Mustafa


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