Towards neuromorphic electronics: Memristors on foldable silicon fabric
Type
ArticleKAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Integrated Nanotechnology Lab
Physical Science and Engineering (PSE) Division
Sensors Lab
Date
2014-11Permanent link to this record
http://hdl.handle.net/10754/563834
Metadata
Show full item recordAbstract
The advantages associated with neuromorphic computation are rich areas of complex research. We address the fabrication challenge of building neuromorphic devices on structurally foldable platform with high integration density. We present a CMOS compatible fabrication process to demonstrate for the first time memristive devices fabricated on bulk monocrystalline silicon (100) which is next transformed into a flexible thin sheet of silicon fabric with all the pre-fabricated devices. This process preserves the ultra-high integration density advantage unachievable on other flexible substrates. In addition, the memristive devices are of the size of a motor neuron and the flexible/folded architectural form factor is critical to match brain cortex's folded pattern for ultra-compact design.Citation
Ghoneim, M. T., Zidan, M. A., Salama, K. N., & Hussain, M. M. (2014). Towards neuromorphic electronics: Memristors on foldable silicon fabric. Microelectronics Journal, 45(11), 1392–1395. doi:10.1016/j.mejo.2014.07.011Publisher
Elsevier BVJournal
Microelectronics Journalae974a485f413a2113503eed53cd6c53
10.1016/j.mejo.2014.07.011