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dc.contributor.authorSevilla, Galo T.
dc.contributor.authorGhoneim, Mohamed T.
dc.contributor.authorFahad, Hossain M.
dc.contributor.authorRojas, Jhonathan Prieto
dc.contributor.authorHussain, Aftab M.
dc.contributor.authorHussain, Muhammad Mustafa
dc.date.accessioned2015-08-03T12:10:48Z
dc.date.available2015-08-03T12:10:48Z
dc.date.issued2014-09-05
dc.identifier.citationTorres Sevilla, G. A., Ghoneim, M. T., Fahad, H., Rojas, J. P., Hussain, A. M., & Hussain, M. M. (2014). Flexible Nanoscale High-Performance FinFETs. ACS Nano, 8(10), 9850–9856. doi:10.1021/nn5041608
dc.identifier.issn19360851
dc.identifier.pmid25185112
dc.identifier.doi10.1021/nn5041608
dc.identifier.urihttp://hdl.handle.net/10754/563807
dc.description.abstractWith the emergence of the Internet of Things (IoT), flexible high-performance nanoscale electronics are more desired. At the moment, FinFET is the most advanced transistor architecture used in the state-of-the-art microprocessors. Therefore, we show a soft-etch based substrate thinning process to transform silicon-on-insulator (SOI) based nanoscale FinFET into flexible FinFET and then conduct comprehensive electrical characterization under various bending conditions to understand its electrical performance. Our study shows that back-etch based substrate thinning process is gentler than traditional abrasive back-grinding process; it can attain ultraflexibility and the electrical characteristics of the flexible nanoscale FinFET show no performance degradation compared to its rigid bulk counterpart indicating its readiness to be used for flexible high-performance electronics.
dc.description.sponsorshipWe acknowledge the support from MUST OCRF Competitive Research Grant: CRG-1-2012-HUS-008 for this work.
dc.publisherAmerican Chemical Society (ACS)
dc.subjectFinFETs
dc.subjectflexible silicon
dc.subjecthigh-performance flexible electronics
dc.titleFlexible nanoscale high-performance FinFETs
dc.typeArticle
dc.contributor.departmentIntegrated Nanotechnology Lab
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.identifier.journalACS Nano
kaust.personSevilla, Galo T.
kaust.personGhoneim, Mohamed T.
kaust.personFahad, Hossain M.
kaust.personRojas, Jhonathan Prieto
kaust.personHussain, Aftab M.
kaust.personHussain, Muhammad Mustafa
dc.date.published-online2014-09-05
dc.date.published-print2014-10-28


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