AuthorsSevilla, Galo T.
Ghoneim, Mohamed T.
Fahad, Hossain M.
Rojas, Jhonathan Prieto
Hussain, Aftab M.
Hussain, Muhammad Mustafa
KAUST DepartmentIntegrated Nanotechnology Lab
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Permanent link to this recordhttp://hdl.handle.net/10754/563807
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AbstractWith the emergence of the Internet of Things (IoT), flexible high-performance nanoscale electronics are more desired. At the moment, FinFET is the most advanced transistor architecture used in the state-of-the-art microprocessors. Therefore, we show a soft-etch based substrate thinning process to transform silicon-on-insulator (SOI) based nanoscale FinFET into flexible FinFET and then conduct comprehensive electrical characterization under various bending conditions to understand its electrical performance. Our study shows that back-etch based substrate thinning process is gentler than traditional abrasive back-grinding process; it can attain ultraflexibility and the electrical characteristics of the flexible nanoscale FinFET show no performance degradation compared to its rigid bulk counterpart indicating its readiness to be used for flexible high-performance electronics.
SponsorsWe acknowledge the support from MUST OCRF Competitive Research Grant: CRG-1-2012-HUS-008 for this work.
PublisherAmerican Chemical Society (ACS)
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