KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Nano Energy Lab
Permanent link to this recordhttp://hdl.handle.net/10754/563714
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AbstractWe report the memory device on paper by means of an all-printing approach. Using a sequence of inkjet and screen-printing techniques, a simple metal-insulator-metal device structure is fabricated on paper as a resistive random access memory with a potential to reach gigabyte capacities on an A4 paper. The printed-paper-based memory devices (PPMDs) exhibit reproducible switching endurance, reliable retention, tunable memory window, and the capability to operate under extreme bending conditions. In addition, the PBMD can be labeled on electronics or living objects for multifunctional, wearable, on-skin, and biocompatible applications. The disposability and the high-security data storage of the paper-based memory are also demonstrated to show the ease of data handling, which are not achievable for regular silicon-based electronic devices. We envision that the PPMDs manufactured by this cost-effective and time-efficient all-printing approach would be a key electronic component to fully activate a paper-based circuit and can be directly implemented in medical biosensors, multifunctional devices, and self-powered systems. © 2014 American Chemical Society.
SponsorsWe thank W.W.C., P.K.Y., S.H.D., and H.C.F. for technical support and helpful discussions. This work was supported by the National Science Council of Taiwan (99-2622-E-002-019-CC3, 99-2112-M-002-024-MY3, 99-2120-M-007-011, and 101-2221-E-002-177-MY2).
PublisherAmerican Chemical Society (ACS)