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dc.contributor.authorTsai, Meng-Lin
dc.contributor.authorSu, Shenghan
dc.contributor.authorChang, Jankai
dc.contributor.authorTsai, Dungsheng
dc.contributor.authorChen, Changhsiao
dc.contributor.authorWu, Chih I.
dc.contributor.authorLi, Lain-Jong
dc.contributor.authorChen, Lihjuann
dc.contributor.authorHe, Jr-Hau
dc.date.accessioned2015-08-03T12:07:22Z
dc.date.available2015-08-03T12:07:22Z
dc.date.issued2014-07-25
dc.identifier.citationTsai, M.-L., Su, S.-H., Chang, J.-K., Tsai, D.-S., Chen, C.-H., Wu, C.-I., … He, J.-H. (2014). Monolayer MoS2 Heterojunction Solar Cells. ACS Nano, 8(8), 8317–8322. doi:10.1021/nn502776h
dc.identifier.issn19360851
dc.identifier.doi10.1021/nn502776h
dc.identifier.urihttp://hdl.handle.net/10754/563711
dc.description.abstractWe realized photovoltaic operation in large-scale MoS2 monolayers by the formation of a type-II heterojunction with p-Si. The MoS 2 monolayer introduces a built-in electric field near the interface between MoS2 and p-Si to help photogenerated carrier separation. Such a heterojunction photovoltaic device achieves a power conversion efficiency of 5.23%, which is the highest efficiency among all monolayer transition-metal dichalcogenide-based solar cells. The demonstrated results of monolayer MoS 2/Si-based solar cells hold the promise for integration of 2D materials with commercially available Si-based electronics in highly efficient devices. © 2014 American Chemical Society.
dc.publisherAmerican Chemical Society (ACS)
dc.subject2D material
dc.subjectchemical vapor deposition
dc.subjectheterojunction solar cell
dc.subjectmolybdenum disulfide
dc.subjectmonolayer
dc.titleMonolayer MoS2 heterojunction solar cells
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentNano Energy Lab
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalACS Nano
dc.contributor.institutionDepartment of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
dc.contributor.institutionInstitute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan
dc.contributor.institutionInstitute of Atomic and Molecular Sciences, Academia Sinica, Taipei 11529, Taiwan
kaust.personLi, Lain-Jong
kaust.personHe, Jr-Hau
kaust.personTsai, Meng-Lin
dc.date.published-online2014-07-25
dc.date.published-print2014-08-26


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