Type
ArticleAuthors
Tsai, Meng-Lin
Su, Shenghan
Chang, Jankai
Tsai, Dungsheng
Chen, Changhsiao
Wu, Chih I.
Li, Lain-Jong

Chen, Lihjuann
He, Jr-Hau

KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
KAUST Solar Center (KSC)
Material Science and Engineering Program
Nano Energy Lab
Physical Science and Engineering (PSE) Division
Date
2014-07-25Online Publication Date
2014-07-25Print Publication Date
2014-08-26Permanent link to this record
http://hdl.handle.net/10754/563711
Metadata
Show full item recordAbstract
We realized photovoltaic operation in large-scale MoS2 monolayers by the formation of a type-II heterojunction with p-Si. The MoS 2 monolayer introduces a built-in electric field near the interface between MoS2 and p-Si to help photogenerated carrier separation. Such a heterojunction photovoltaic device achieves a power conversion efficiency of 5.23%, which is the highest efficiency among all monolayer transition-metal dichalcogenide-based solar cells. The demonstrated results of monolayer MoS 2/Si-based solar cells hold the promise for integration of 2D materials with commercially available Si-based electronics in highly efficient devices. © 2014 American Chemical Society.Citation
Tsai, M.-L., Su, S.-H., Chang, J.-K., Tsai, D.-S., Chen, C.-H., Wu, C.-I., … He, J.-H. (2014). Monolayer MoS2 Heterojunction Solar Cells. ACS Nano, 8(8), 8317–8322. doi:10.1021/nn502776hPublisher
American Chemical Society (ACS)Journal
ACS Nanoae974a485f413a2113503eed53cd6c53
10.1021/nn502776h