Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon

Abstract
A silicon-based laser, preferably electrically pumped, has long been a scientific and engineering goal. We demonstrate here, for the first time, an edge-emitting InGaN/GaN disk-in-nanowire array electrically pumped laser emitting in the green (λ = 533 nm) on (001) silicon substrate. The devices display excellent dc and dynamic characteristics with values of threshold current density, differential gain, T0 and small signal modulation bandwidth equal to 1.76 kA/cm2, 3 × 10-17 cm2, 232 K, and 5.8 GHz respectively under continuous wave operation. Preliminary reliability measurements indicate a lifetime of 7000 h. The emission wavelength can be tuned by varying the alloy composition in the quantum disks. The monolithic nanowire laser on (001)Si can therefore address wide-ranging applications such as solid state lighting, displays, plastic fiber communication, medical diagnostics, and silicon photonics. © 2014 American Chemical Society.

Citation
Frost, T., Jahangir, S., Stark, E., Deshpande, S., Hazari, A., Zhao, C., … Bhattacharya, P. (2014). Monolithic Electrically Injected Nanowire Array Edge-Emitting Laser on (001) Silicon. Nano Letters, 14(8), 4535–4541. doi:10.1021/nl5015603

Acknowledgements
The work was supported by the National Science Foundation (MRSEC program) under Grant DMR-1120923 and by the King Abdullah University of Science and Technology, Kingdom of Saudi Arabia, under Grant CRG-1-2012-001-010-MIC. T.F. and E.S. acknowledge support provided by National Science Foundation Graduate Research Fellowships. Epitaxial growth and device fabrication were done in the Lurie Nanofabrication Facility, a member of the National Nanotechnology Infrastructure Network funded by the National Science Foundation.

Publisher
American Chemical Society (ACS)

Journal
Nano Letters

DOI
10.1021/nl5015603

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