Show simple item record

dc.contributor.authorShen, Youde
dc.contributor.authorTurner, Stuart G.
dc.contributor.authorYang, Ping
dc.contributor.authorVan Tendeloo, Gustaaf
dc.contributor.authorLebedev, Oleg I.
dc.contributor.authorWu, Tao
dc.date.accessioned2015-08-03T12:07:02Z
dc.date.available2015-08-03T12:07:02Z
dc.date.issued2014-07-07
dc.identifier.citationShen, Y., Turner, S., Yang, P., Van Tendeloo, G., Lebedev, O. I., & Wu, T. (2014). Epitaxy-Enabled Vapor–Liquid–Solid Growth of Tin-Doped Indium Oxide Nanowires with Controlled Orientations. Nano Letters, 14(8), 4342–4351. doi:10.1021/nl501163n
dc.identifier.issn15306984
dc.identifier.doi10.1021/nl501163n
dc.identifier.urihttp://hdl.handle.net/10754/563703
dc.description.abstractControlling the morphology of nanowires in bottom-up synthesis and assembling them on planar substrates is of tremendous importance for device applications in electronics, photonics, sensing and energy conversion. To date, however, there remain challenges in reliably achieving these goals of orientation-controlled nanowire synthesis and assembly. Here we report that growth of planar, vertical and randomly oriented tin-doped indium oxide (ITO) nanowires can be realized on yttria-stabilized zirconia (YSZ) substrates via the epitaxy-assisted vapor-liquid-solid (VLS) mechanism, by simply regulating the growth conditions, in particular the growth temperature. This robust control on nanowire orientation is facilitated by the small lattice mismatch of 1.6% between ITO and YSZ. Further control of the orientation, symmetry and shape of the nanowires can be achieved by using YSZ substrates with (110) and (111), in addition to (100) surfaces. Based on these insights, we succeed in growing regular arrays of planar ITO nanowires from patterned catalyst nanoparticles. Overall, our discovery of unprecedented orientation control in ITO nanowires advances the general VLS synthesis, providing a robust epitaxy-based approach toward rational synthesis of nanowires. © 2014 American Chemical Society.
dc.description.sponsorshipThis work was supported in part by Singapore National Research Foundation, King Abdullah University of Science and Technology (KAUST), and European Union Seventh Framework Programme under Grant 312483 - ESTEEM2 (Integrated Infrastructure Initiative-I3). S.T. acknowledges the fund for scientific research Flanders (FWO) under the form of postdoctoral fellowship and for projects G004613N and G004413N. P.Y. is supported by SSLS via the NUS Core Support C-380-003-003-001.
dc.publisherAmerican Chemical Society (ACS)
dc.subjectepitaxy
dc.subjectindium tin oxide
dc.subjectNanowire
dc.subjectorientation control
dc.subjectvapor-liquid-solid mechanism
dc.titleEpitaxy-enabled vapor-liquid-solid growth of tin-doped indium oxide nanowires with controlled orientations
dc.typeArticle
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentLaboratory of Nano Oxides for Sustainable Energy
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalNano Letters
dc.contributor.institutionDivision of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore, Singapore
dc.contributor.institutionEMAT, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium
dc.contributor.institutionSingapore Synchrotron Light Source (SSLS), National University of Singapore, 5 Research Link, 117603, Singapore, Singapore
dc.contributor.institutionLaboratoire CRISMAT, ENSICAEN, CNRS UMR 6508, 6 Boulevard du Maréchal Juin, 14050 Caen, France
kaust.personWu, Tao
dc.date.published-online2014-07-07
dc.date.published-print2014-08-13


This item appears in the following Collection(s)

Show simple item record