Fabrication of relaxer-based piezoelectric energy harvesters using a sacrificial poly-Si seeding layer
AuthorsFuentes-Fernandez, E. M A
Salomon-Preciado, A. M.
Gnade, Bruce E.
Quevedo-López, Manuel Angel Quevedo
Alshareef, Husam N.
KAUST DepartmentMaterials Science and Engineering Program
Physical Sciences and Engineering (PSE) Division
Functional Nanomaterials and Devices Research Group
Permanent link to this recordhttp://hdl.handle.net/10754/563694
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AbstractThe effect of a polycrystalline silicon (poly-Si) seeding layer on the properties of relaxor Pb(Zr0.53,Ti0.47)O3-Pb(Zn1/3,Nb2/3)O3 (PZT-PZN) thin films and energy-harvesting cantilevers was studied. We deposited thin films of the relaxor on two substrates, with and without a poly-Si seeding layer. The seeding layer, which also served as a sacrificial layer to facilitate cantilever release, was found to improve morphology, phase purity, crystal orientation, and electrical properties. We attributed these results to reduction of the number of nucleation sites and, therefore, to an increase in relaxor film grain size. The areal power density of the wet-based released harvester was measured. The power density output of the energy harvester with this relaxor composition and the poly-Si seeding layer was 325 μW/cm2.
SponsorsThe authors would like to thank the National Science Foundation for the Phase I STTR #0810391 and Phase IB #0937831 grants supplemented by the Texas Emerging Technology Fund seed grant (March 2008-Sept 2009). The research reported here was also supported by King Abdullah University of Science and Technology.
JournalJournal of Electronic Materials