Low-cost high-quality crystalline germanium based flexible devices
KAUST DepartmentIntegrated Nanotechnology Lab
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
KAUST Grant NumberCRG-1-2012-HUS-008
Online Publication Date2014-06-16
Print Publication Date2014-09
Permanent link to this recordhttp://hdl.handle.net/10754/563599
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AbstractHigh performance flexible electronics promise innovative future technology for various interactive applications for the pursuit of low-cost, light-weight, and multi-functional devices. Thus, here we show a complementary metal oxide semiconductor (CMOS) compatible fabrication of flexible metal-oxide-semiconductor capacitors (MOSCAPs) with high-κ/metal gate stack, using a physical vapor deposition (PVD) cost-effective technique to obtain a high-quality Ge channel. We report outstanding bending radius ~1.25 mm and semi-transparency of 30%.
SponsorsWe thank KAUST OCRF Competitive Research Grant (CRG) 1 CRG-1-2012-HUS-008 for supporting this research.