Low-cost high-quality crystalline germanium based flexible devices

Type
Article

Authors
Nassar, Joanna M.
Hussain, Aftab M.
Rojas, Jhonathan Prieto
Hussain, Muhammad Mustafa

KAUST Department
Integrated Nanotechnology Lab
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program

KAUST Grant Number
CRG-1-2012-HUS-008

Online Publication Date
2014-06-16

Print Publication Date
2014-09

Date
2014-06-16

Abstract
High performance flexible electronics promise innovative future technology for various interactive applications for the pursuit of low-cost, light-weight, and multi-functional devices. Thus, here we show a complementary metal oxide semiconductor (CMOS) compatible fabrication of flexible metal-oxide-semiconductor capacitors (MOSCAPs) with high-κ/metal gate stack, using a physical vapor deposition (PVD) cost-effective technique to obtain a high-quality Ge channel. We report outstanding bending radius ~1.25 mm and semi-transparency of 30%.

Citation
Nassar, J. M., Hussain, A. M., Rojas, J. P., & Hussain, M. M. (2014). Low-cost high-quality crystalline germanium based flexible devices. Physica Status Solidi (RRL) - Rapid Research Letters, 08(09), 794–800. doi:10.1002/pssr.201409257

Acknowledgements
We thank KAUST OCRF Competitive Research Grant (CRG) 1 CRG-1-2012-HUS-008 for supporting this research.

Publisher
Wiley

Journal
physica status solidi (RRL) - Rapid Research Letters

DOI
10.1002/pssr.201409257

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