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dc.contributor.authorNing, Zhijun
dc.contributor.authorVoznyy, Oleksandr
dc.contributor.authorPan, Jun
dc.contributor.authorHoogland, Sjoerd H.
dc.contributor.authorAdinolfi, Valerio
dc.contributor.authorXu, Jixian
dc.contributor.authorLi, Min
dc.contributor.authorKirmani, Ahmad R.
dc.contributor.authorSun, Jonpaul
dc.contributor.authorMinor, James C.
dc.contributor.authorKemp, Kyle W.
dc.contributor.authorDong, Haopeng
dc.contributor.authorRollny, Lisa R.
dc.contributor.authorLabelle, André J.
dc.contributor.authorCarey, Graham H.
dc.contributor.authorSutherland, Brandon R.
dc.contributor.authorHill, Ian G.
dc.contributor.authorAmassian, Aram
dc.contributor.authorLiu, Huan
dc.contributor.authorTang, Jiang
dc.contributor.authorBakr, Osman
dc.contributor.authorSargent, E. H.
dc.date.accessioned2015-08-03T11:55:14Z
dc.date.available2015-08-03T11:55:14Z
dc.date.issued2014-06-08
dc.identifier.citationNing, Z., Voznyy, O., Pan, J., Hoogland, S., Adinolfi, V., Xu, J., … Sargent, E. H. (2014). Air-stable n-type colloidal quantum dot solids. Nature Materials, 13(8), 822–828. doi:10.1038/nmat4007
dc.identifier.issn14761122
dc.identifier.pmid24907929
dc.identifier.doi10.1038/nmat4007
dc.identifier.urihttp://hdl.handle.net/10754/563593
dc.description.abstractColloidal quantum dots (CQDs) offer promise in flexible electronics, light sensing and energy conversion. These applications rely on rectifying junctions that require the creation of high-quality CQD solids that are controllably n-type (electron-rich) or p-type (hole-rich). Unfortunately, n-type semiconductors made using soft matter are notoriously prone to oxidation within minutes of air exposure. Here we report high-performance, air-stable n-type CQD solids. Using density functional theory we identify inorganic passivants that bind strongly to the CQD surface and repel oxidative attack. A materials processing strategy that wards off strong protic attack by polar solvents enabled the synthesis of an air-stable n-type PbS CQD solid. This material was used to build an air-processed inverted quantum junction device, which shows the highest current density from any CQD solar cell and a solar power conversion efficiency as high as 8%. We also feature the n-type CQD solid in the rapid, sensitive, and specific detection of atmospheric NO2. This work paves the way for new families of electronic devices that leverage air-stable quantum-tuned materials. © 2014 Macmillan Publishers Limited. All rights reserved.
dc.description.sponsorshipThis publication is based in part on work supported by Award KUS-11-009-21, made by King Abdullah University of Science and Technology (KAUST), by the Ontario Research Fund-Research Excellence Program, and by the Natural Sciences and Engineering Research Council (NSERC) of Canada. We thank Angstrom Engineering, and Innovative Technology, for useful discussions regarding material deposition methods and control of the glovebox environment, respectively. Computations were performed using the BlueGene/Q supercomputer at the SciNet HPC Consortium provided through the Southern Ontario Smart Computing Innovation Platform (SOSCIP). The SOSCIP consortium is funded by the Ontario Government and the Federal Economic Development Agency for Southern Ontario. H.D. would like to acknowledge financial support from the China Scholarship Council (CSC). The authors thank Larissa Levina for the assistance with CQDs synthesis, S. M. Thon, A. H. Ip and M. Adachi for helpful discussions, S. Masala and J. McDowell for measurement assistance, and E. Palmiano, R. Wolowiec and D. Kopilovic for their help during the course of study. We thank L. Goncharova for assistance with RBS measurements.
dc.publisherSpringer Nature
dc.titleAir-stable n-type colloidal quantum dot solids
dc.typeArticle
dc.contributor.departmentFunctional Nanomaterials Lab (FuNL)
dc.contributor.departmentKAUST Catalysis Center (KCC)
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentOrganic Electronics and Photovoltaics Group
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalNature Materials
dc.contributor.institutionUniv Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada
dc.contributor.institutionHuazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Hubei, Peoples R China
dc.contributor.institutionDalhousie Univ, Dept Phys & Atmospher Sci, Halifax, NS B3H 4R2, Canada
dc.contributor.institutionHuazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Hubei, Peoples R China
kaust.personPan, Jun
kaust.personAmassian, Aram
kaust.personBakr, Osman M.
kaust.personKirmani, Ahmad R.
kaust.grant.numberKUS-11-009-21
dc.date.published-online2014-06-08
dc.date.published-print2014-08


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